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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC4129 description collector-emitter breakdown voltage- : v (br)ceo = 400v(min) high switching speed wide area of safe operation applications designed for switching regulator and general purpose applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 400 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 7 v i c collector current-continuous 5 a i cm collector current-peak 7 a collector power dissipation @t a =25 1.5 p c collector power dissipation @t c =25 30 w t j junction temperature 150 t stg storage temperature -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC4129 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 1ma; i b = 0 b 400 v v (br)cbo collector-base breakdown voltage i c = 50 a; i e = 0 400 v v (br)ebo emitter-base breakdown voltage i e = 50 a; i c = 0 7 v v ce (sat) collector-emitter saturation voltage i c = 5a; i b = 1a b 1.0 v v be (sat) base-emitter saturation voltage i c = 5a; i b = 1a b 1.5 v a i cbo collector cutoff current v cb = 400v; i e = 0 10 a i ebo emitter cutoff current v eb = 5v; i c = 0 10 h fe dc current gain i c = 3a; v ce = 5v 16 50 c ob output capacitance i e = 0; v cb = 10v; f= 1mhz 80 pf f t current-gain?bandwidth product i e = -0.5a; v ce = 10v 15 mhz isc website www.iscsemi.cn 2 |
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